TN2106_03 datasheet(2/4 Pages) SUTEX

2 / 4 page

Package

ID (continuous)*

ID (pulsed)

Power Dissipation

θjc

θja

IDR*IDRM

@ TA = 25°C

°C/W

TO-236AB

0.28A

0.8A

0.36W

200

350

0.28A

0.8A

TO-92

0.30A

1.0A

0.74W

125

170

0.30A

1.0A

* I

D (continuous) is limited by max rated Tj.

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

DSS

Drain-to-Source Breakdown Voltage

D = 1mA, VGS = 0V

VGS(th)

Gate Threshold Voltage

0.6

2.0

VGS = VDS, ID = 1mA

∆VGS(th)

Change in VGS(th) with Temperature

-3.8

-5.5

mV/°CID = 1mA, VGS = VDS

GSS

Gate Body Leakage

0.1

100

GS = ±20V, VDS = 0V

IDSS

Zero Gate Voltage Drain Current

µAVGS = 0V, VDS = Max Rating

100

µAVGS = 0V, VDS = 0.8 Max Rating

TA = 125°C

ID(ON)

ON-State Drain Current

0.6

VGS = 10V, VDS = 25V

DS(ON)

5.0

Ω

GS = 4.5V, ID = 200mA

2.5

Ω

VGS = 10V, ID = 500mA

∆RDS(ON)

Change in RDS(ON) with Temperature

0.70

1.0

%/°CVGS = 10V, ID = 500mA

Forward Transconductance

150

400

DS = 25V, ID = 500mA

CISS

Input Capacitance

COSS

Common Source Output Capacitance

VGS = 0V, VDS = 25V, f = 1MHz

RSS

Reverse Transfer Capacitance

td(ON)

Turn-ON Delay Time

Rise Time

d(OFF)

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage Drop

1.2

1.8

SD = 0.5A, VGS = 0V

Reverse Recovery Time

400

SD = 0.5A, VGS = 0V

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

Electrical Characteristics (@ 25°C unless otherwise specified)

VDD = 25V

ID = 0.5A

GEN = 25Ω

Switching Waveforms and Test Circuit

90%

10%

90%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

(ON)

d(ON)

(OFF)

d(OFF)

INPUT

OUTPUT

10V

gen

Static Drain-to-Source

ON-State Resistance

TN2106

TN2106 Datenblatt(PDF) 2 Page - Supertex, Inc

TN2106 Datenblatt(HTML) 2 Page - Supertex, Inc

Html Pages

1 2 3 4

Datenblatt Download

Link URL