| Datenblatt-Suchmaschine für elektronische Bauteile |
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ESH1DFSH Datenblatt(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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ESH1DFSH Datenblatt(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page ![]() ESH1DFSH Taiwan Semiconductor 2 Version: C2103 THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 18 °C/W Junction-to-ambient thermal resistance RӨJA 72 °C/W Junction-to-case thermal resistance RӨJC 14 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage (1) IF = 0.5A, TJ = 25°C VF 0.80 - V IF = 1.0A, TJ = 25°C 0.84 0.94 V IF = 0.5A, TJ = 125°C 0.64 - V IF = 1.0A, TJ = 125°C 0.71 0.81 V Reverse current @ rated VR (2) TJ = 25°C IR - 5 µA TJ = 125°C - 27 µA Junction capacitance 1MHz, VR = 4.0V CJ 15 - pF Reverse recovery time IF = 0.5A, IR = 1.0A Irr = 0.25A trr - 25 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING ESH1DFSH SOD-128 14,000 / Tape & Reel |
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