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ADS8317I3 Datenblatt(PDF) 5 Page - Texas Instruments

Teilenummer ADS8317I3
Bauteilbeschribung  16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER
PDF  29 Pages
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
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ADS8317I3 Datenblatt(HTML) 5 Page - Texas Instruments

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ELECTRICAL CHARACTERISTICS: VDD = +2.7V
ADS8317
SBAS356A – JUNE 2007 – REVISED SEPTEMBER 2007
At –40
°C to +85°C, V
REF = +1.25V, –IN = 1.25V, fSAMPLE = 200kHz, and fCLK = 24 × fSAMPLE, unless otherwise noted.
ADS8317I
ADS8317IB
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
ANALOG INPUT
Full-scale range
FSR +IN – (–IN)
–VREF
VREF
–VREF
VREF
V
Absolute input range
+IN
–0.1
VDD + 0.1
–0.1
VDD + 0.1
V
Hold
5
5
G
Input resistance
RON
Sampling
100
150
100
150
Input capacitance
During sampling
24
24
pF
Input leakage current
±50
±50
nA
Differential input capacitance
+IN to –IN, during sampling
20
20
pF
Full-power bandwidth
FSBW fS sinewave, SINAD = 60dB
1000
1000
kHz
DC ACCURACY
Resolution
16
16
Bits
No missing codes
NMC
16
16
16
16
Bits
Integral linearity error
INL
–3
±2
+3
–2
±1.5
+2
LSB
Differential linearity error
DNL
–1 +1.5,–1
+2.5
–1
±1
+2
LSB
Offset error
VOS
–2
±1
+2
–1
±0.5
+1
mV
Offset error drift
TCVOS
±0.4
±0.4
μV/
°C
Positive
–32
±16
+32
–32
±16
+32
LSB
Gain error
GERR
Negative
–32
±16
+32
–32
±16
+32
LSB
Gain error drift
TCGERR
±0.15
±0.15
ppm/
°C
Bipolar zero error
–2
±0.8
+2
–1
±0.4
+1
mV
Bipolar zero error drift
±0.2
±0.2
μV/
°C
Noise
50
50
μVRMS
Power-supply rejection
PSRR 2.7V
≤ VDD ≤ 3.6V
1
1
LSB
SAMPLING DYNAMICS
Conversion time (16 DCLOCKs)
tCONV 24kHz ≤ fCLK ≤ 4.8MHz
3.333
666.7
3.333
666.7
μs
Acquisition time (4.5 DCLOCKs)
tAQ fCLK = 4.8MHz
0.9375
0.9375
μs
Throughput rate (22 DCLOCKs)
200
200
kSPS
Clock frequency
0.024
4.8
0.024
4.8
MHz
AC ACCURACY
2.5VPP sinewave at 2kHz
–104
–107
dB
Total harmonic distortion
THD
2.5VPP sinewave at 10kHz
–101
–106
dB
2.5VPP sinewave at 2kHz
106
108
dB
Spurious-free dynamic range
SFDR
2.5VPP sinewave at 10kHz
104
107
dB
2.5VPP sinewave at 2kHz
84.8
85
dB
Signal-to-noise ratio
SNR
2.5VPP sinewave at 10kHz
84.8
85
dB
2.5VPP sinewave at 2kHz
84.7
84.9
dB
Signal-to-noise + distortion
SINAD
2.5VPP sinewave at 10kHz
84.7
84.8
dB
2.5VPP sinewave at 2kHz
13.77
13.8
Bits
Effective number of bits
ENOB
2.5VPP sinewave at 10kHz
13.77
13.79
Bits
VOLTAGE REFERENCE INPUT
Reference voltage
1
VDD/2
1
VDD/2
V
CS = GND, fSAMPLE = 0Hz
5
5
k
Reference input resistance
CS = VDD
5
5
G
Reference input capacitance
20
20
pF
fS = 200kHz
9
14
9
14
μA
fS = 100kHz
3
5
3
5
μA
Reference input current
fS = 10kHz
0.5
1
0.5
1
μA
CS = VDD
0.1
0.1
μA
Copyright © 2007, Texas Instruments Incorporated
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