This Data Sheet may be revised by subsequent versions

©2004 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

13

EN25F80

Rev. D, Issue Date: 2007/05/16

Read Data Bytes (READ) (03h)

The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data

Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the

rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial Data

(CLK).

The instruction sequence is shown in Figure 9.. The first byte addressed can be at any location. The

address is automatically incremented to the next higher address after each byte of data is shifted out. The

whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the

highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be

continued indefinitely.

The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select

(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction, while

an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is

in progress.