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STAV36240AY2 Datenblatt(PDF) 2 Page - Innogration Technologies, Inc.

Teilenummer STAV36240AY2
Bauteilbeschribung  Gallium Nitride 50V, 240W, 3.3-3.6GHz RF Power Transistor
PDF  5 Pages
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Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.

STAV36240AY2 Datenblatt(HTML) 2 Page - Innogration Technologies, Inc.

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Innogration (Suzhou) Co., Ltd
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Document Number: STAV36240AY2
Preliminary Datasheet V1.0
Operating Junction Temperature
TJ
+225
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case by FEA
TC= 85C, at Pd=70W
RJC
TBD
C /W
Table 3. Electrical Characteristics (TA = 25℃ unless otherwise noted)
DC Characteristics (Each path, measured on wafer prior to packaging)
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS=-8V; IDS=30mA
VDSS
200
V
Gate Threshold Voltage
VDS =10V, ID = 30mA
VGS(th)
-4
-2
V
Gate Quiescent Voltage
VDS =50V, IDS=200mA,
Measured in Functional Test
VGS(Q)
-3.24
V
Ruggedness Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Load mismatch capability
3.5GHz, Pout=240W pulse CW
for each path
All phase,
No device damages
VSWR
10:1
Figure 2: Median Lifetime vs. Channel Temperature



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