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STAV58010P2 Datenblatt(PDF) 2 Page - Innogration Technologies, Inc.

Teilenummer STAV58010P2
Bauteilbeschribung  Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor
PDF  5 Pages
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Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.

STAV58010P2 Datenblatt(HTML) 2 Page - Innogration Technologies, Inc.

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Innogration (Suzhou) Co., Ltd
.
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Document Number: STAV58010P2
Preliminary Datasheet V1.0
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
+200
Vdc
Gate--Source Voltage
VGS
-8 to +0.5
Vdc
Maximum forward gate current
Igs
1.2
mA
Operating Voltage
VDD
55
Vdc
Storage Temperature Range
Tstg
-65 to +150
C
Case Operating Temperature
TC
+150
C
Operating Junction Temperature
TJ
+225
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case by FEA
TC= 85C, Pdiss=3.5W at Pavg=26dBm WCDMA 1 carrier
RJC
14
C /W
Table 3. Electrical Characteristics (TA = 25℃ unless otherwise noted)
DC Characteristics (measured on wafer prior to packaging)
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS=-8V; IDS=1.2mA
VDSS
200
V
Gate Threshold Voltage
VDS =10V, ID = 1.2mA
VGS(th)
-4
-2.9
-2
V
Gate Quiescent Voltage
VDS =50V, IDS=50mA,
Measured in Functional Test
VGS(Q)
-2.65
V
Ruggedness Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Load mismatch capability
3.6GHz, Pout=26dBm WCDMA
1 Carrier, All phase,
No device damages
VSWR
10:1
Figure 2: Median Lifetime vs. Channel Temperature



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