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LP3958TL Datenblatt(PDF) 22 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Teilenummer LP3958TL
Bauteilbeschribung  Lighting Management Unit with High Voltage Boost Converter
PDF  28 Pages
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Hersteller  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LP3958TL Datenblatt(HTML) 22 Page - National Semiconductor (TI)

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Recommended External Components
OUTPUT CAPACITOR, C
OUT
The output capacitor C
OUT directly affects the magnitude of
the output ripple voltage. In general, the higher the value of
C
OUT, the lower the output ripple magnitude. Multilayer ce-
ramic capacitors with low ESR are the best choice. At the
lighter loads, the low ESR ceramics offer a much lower V
OUT
ripple that the higher ESR tantalums of the same value. At
the higher loads, the ceramics offer a slightly lower V
OUT
ripple magnitude than the tantalums of the same value.
However, the dv/dt of the V
OUT ripple with the ceramics is
much lower that the tantalums under all load conditions.
Capacitor voltage rating must be sufficient, 25V or greater is
recommended. Examples of suitable capacitors are: TDK
C3216X5R1E475K,
Panasonic
ECJ3YB1E475K,
ECJMFB1E475K and ECJ4YB1E475K.
Some ceramic capacitors, especially those in small
packages, exhibit a strong capacitance reduction with
the increased applied voltage (DC bias effect). The ca-
pacitance value can fall below half of the nominal ca-
pacitance. Too low output capacitance can make the
boost converter unstable. Output capacitors DC bias
effect should be better than –50% at 18V.
INPUT CAPACITOR, C
IN
The input capacitor C
IN directly affects the magnitude of the
input ripple voltage and to a lesser degree the V
OUT ripple. A
higher value C
IN will give a lower VIN ripple. Capacitor volt-
age rating must be sufficient, 10V or greater is recom-
mended.
OUTPUT DIODE, D
1
A schottky diode should be used for the output diode. Peak
repetitive current should be greater than inductor peak cur-
rent (800mA) to ensure reliable operation. Schottky diodes
with a low forward drop and fast switching speeds are ideal
for increasing efficiency in portable applications. Choose a
reverse breakdown voltage of the schottky diode signifi-
cantly larger (~30V) than the output voltage. Do not use
ordinary rectifier diodes, since slow switching speeds and
long recovery times cause the efficiency and the load regu-
lation to suffer. Example of suitable diode is: Central Semi-
conductor CMMSH1-40.
EMI FILTER COMPONENTS C
SW,RSW
EMI filter (R
SW and CSW) on the SW pin can be used to
suppress EMI caused by fast switching. These components
should be as near as possible to the SW pin to ensure
reliable operation. 50V or greater voltage rating is recom-
mended for capacitor.
INDUCTOR, L
1
A 10uH shielded inductor is suggested for LP3958 boost
converter. The inductor should have a saturation current
rating higher than the rms current it will experience during
circuit operation (600mA). Less than 300m
Ω ESR is sug-
gested for high efficiency and sufficient output current. Open
core inductors cause flux linkage with circuit components
and interfere with the normal operation of the circuit. This
should be avoided. For high efficiency, choose an inductor
with a high frequency core material such as ferrite to reduce
the core losses. To minimize radiated noise, use a toroid, pot
core or shielded core inductor. The inductor should be con-
nected to the SW pin as close to the IC as possible. Ex-
amples
of
suitable
inductors
are:
TDK
VLF4012AT-
100MR79, VLF4018BT-100MR90, VLF5014AT-100MR92,
Coilcraft LPS4018-103ML.
LIST OF RECOMMENDED EXTERNAL COMPONENTS
Symbol
Symbol explanation
Value
Unit
Type
C
VDD
C between VDD1,2 and GND
100
nF
Ceramic, X7R / X5R
C
VDDIO
C between VDDIO and GND
100
nF
Ceramic, X7R / X5R
C
VDDA
C between VDDA and GND
1
µF
Ceramic, X7R / X5R
C
OUT
C between FB and GND
2 x 4.7 or1x10
µF
Ceramic, X7R / X5R, tolerance +/-10%
Maximum DC bias effect @ 18V
-50
%
C
IN
C between battery voltage and GND
10
µF
Ceramic, X7R / X5R
L
1
L between SW and V
BAT
10
µH
Shielded inductor, low ESR
Saturation current
600
mA
C
VREF
C between V
REF and GND
100
nF
Ceramic, X7R / X5R
R
KEY
R between I
KEY and GND
8.2
k
±1%
R
RT
R between I
RT and GND
82
k
±1%
D
1
Rectifying diode (Vf @ maxload)
0.3-0.5
V
Schottky diode
Reverse voltage
30
V
Repetitive peak current
800
mA
C
SW
C in EMI filter
100
pF
Ceramic, X7R / X5R, 50V
R
SW
R in EMI filter
390
±1%
LEDs
User Defined
Note: See Application Note AN-1436 "Design and Programming Examples for Lighting Management Unit LP3958" for more
information on how to design with LP3958
www.national.com
22



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