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GD50FSX65L2S Datenblatt(PDF) 1 Page - StarPower Europe AG |
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GD50FSX65L2S Datenblatt(HTML) 1 Page - StarPower Europe AG |
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1 / 9 page ![]() GD50FSX65L2S IGBT Module ©2021 STARPOWER Semiconductor Ltd. 2/9/2021 1/9 A01 STARPOWER SEMICONDUCTOR IGBT GD50FSX65L2S 650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated heatsink using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic |
Ähnliche Teilenummer - GD50FSX65L2S |
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Ähnliche Beschreibung - GD50FSX65L2S |
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