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GD50PIX120C5SN Datenblatt(PDF) 4 Page - StarPower Europe AG |
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GD50PIX120C5SN Datenblatt(HTML) 4 Page - StarPower Europe AG |
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4 / 13 page ![]() GD50PIX120C5SN IGBT Module ©2020 STARPOWER Semiconductor Ltd. 2/18/2020 4/13 Preliminary Diode-inverter Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=50A,VGE=0V,Tj=25 oC 1.85 2.30 V IF=50A,VGE=0V,Tj=125 oC 1.90 IF=50A,VGE=0V,Tj=150 oC 1.95 Qr Recovered Charge VR=600V,IF=50A, -di/dt=1400A/ μs,V GE=-15V Tj=25 oC 6.3 μC IRM Peak Reverse Recovery Current 62 A Erec Reverse Recovery Energy 1.67 mJ Qr Recovered Charge VR=600V,IF=50A, -di/dt=1400A/ μs,V GE=-15V Tj=125 oC 10.1 μC IRM Peak Reverse Recovery Current 69 A Erec Reverse Recovery Energy 2.94 mJ Qr Recovered Charge VR=600V,IF=50A, -di/dt=1400A/ μs,V GE=-15V Tj=150 oC 11.5 μC IRM Peak Reverse Recovery Current 72 A Erec Reverse Recovery Energy 3.63 mJ Diode-rectifier Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=50A,VGE=0V,Tj=150 oC 1.00 V IR Reverse Current Tj=150 oC,V R=1600V 2.0 mA |
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