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BFG520. Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer BFG520.
Bauteilbeschribung  NPN 9 GHz wideband transistor
PDF  14 Pages
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BFG520. Datenblatt(HTML) 3 Page - NXP Semiconductors

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NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
up to Ts = 88 °C; note 1
−
300
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts =88 °C; note 1
290 K/W
Rev. 04 - 23 November 2007
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