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HGTP3N60C3D Datenblatt(PDF) 3 Page - Harris Corporation

Teilenummer HGTP3N60C3D
Bauteilbeschribung  6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
PDF  11 Pages
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Hersteller  HARRIS [Harris Corporation]
Direct Link  http://www.harris.com
Logo HARRIS - Harris Corporation

HGTP3N60C3D Datenblatt(HTML) 3 Page - Harris Corporation

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3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
VGE, GATE-TO-EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
µs
DUTY CYCLE <0.5%, VCE = 10V
4
18
20
TC = +150
oC
TC = -40
oC
TC = +25
oC
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
02
4
6
8
10
12V
VGE = 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
9.0V
8.5V
7.5V
7.0V
TC = +25
oC
PULSE DURATION = 250
µs
DUTY CYCLE <0.5%
01
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
µs
DUTY CYCLE <0.5%, VGE = 10V
TC = +150
oC
TC = -40
oC
0
2
4
8
10
12
14
6
16
18
20
TC = +25
oC
0
123
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TC = -40
oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250
µs
0
2
4
8
10
12
14
6
16
18
20
TC = +25
oC
TC = +150
oC
+25
+50
+75
+100
+125
+150
0
1
2
3
4
5
TC, CASE TEMPERATURE (
oC)
VGE = 15V
7
6
0
20
30
50
10
11
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
14
15
13
60
40
10
ISC
tSC
0
4
10
14
VCE = 360V, RGE = 82Ω, TJ = +125
oC
2
6
8
12
70
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS



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