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FS5ASJ-3 Datenblatt(PDF) 4 Page - Powerex Power Semiconductors

Teilenummer FS5ASJ-3
Bauteilbeschribung  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Hersteller  POWEREX [Powerex Power Semiconductors]
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FS5ASJ-3 Datenblatt(HTML) 4 Page - Powerex Power Semiconductors

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5ASJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Qg (nC)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE VSD (V)
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH tw (s)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
CHANNEL TEMPERATURE Tch (°C)
10–1
100
2
3
4
5
7
101
2
3
4
5
7
–50
0
50
100
150
VGS = 10V
ID = 1/2ID
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
–50
0
50
100
150
VDS = 10V
ID = 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
VGS = 0V
ID = 1mA
0
2
4
6
8
10
0
4
8
12
16
20
VDS = 50V
Tch = 25°C
ID = 5A
80V
100V
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
VGS = 0V
Pulse Test
TC = 125°C
75°C
25°C
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
10–423 57
23 57
23 57
23 57100 23 57101 23 57102
10–3
10–2
10–1
PDM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse



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