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FS5UM-5 Datenblatt(PDF) 2 Page - Powerex Power Semiconductors

Teilenummer FS5UM-5
Bauteilbeschribung  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Hersteller  POWEREX [Powerex Power Semiconductors]
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FS5UM-5 Datenblatt(HTML) 2 Page - Powerex Power Semiconductors

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5UM-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
ID = 1mA, VGS = 0V
IG =
±100µA, VDS = 0V
VGS =
±25V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 2A, VGS = 10V, RGEN = RGS = 50
Ω
IS = 2A, VGS = 0V
Channel to case
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
V
V
mA
mA
V
W
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
250
±30
—
—
2
—
—
1.6
—
—
—
—
—
—
—
—
—
—
—
—
—
3
1.0
2.0
2.5
270
55
10
11
13
32
22
1.5
—
—
—
±10
1
4
1.3
2.6
—
—
—
—
—
—
—
—
2.0
2.08
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
100
80
60
40
20
0
200
150
100
50
0
5
4
3
2
1
0
0
4
8
12
16
20
PD=
60W
TC = 25°C
Pulse Test
VGS = 20V
10V
6V
5V
5.5V
4V
4.5V
101
7
5
3
2
100
7
5
3
2
10–1
7
5
23 5 7 101 23 5 7 102 23 5 7 103
5
3
2
2
TC = 25°C
Single Pulse
tw=10µs
100µs
1ms
10ms
DC
10
8
6
4
2
0
0
1020304050
PD=
60W
TC = 25°C
Pulse Test
VGS = 20V
10V
6V
5V
7V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
PERFORMANCE CURVES



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