DCP3601CDMR datasheet(5/26 Pages) STMICROELECTRONICS

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Electrical characteristics

TJ = 25 °C, VIN = 24 V unless otherwise specified.

Table 7. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VFB

Feedback voltage

TJ = 25 °C

0.833

0.850

0.867

Quiescent current

LCM version – VEN = 3.3 V, VFB = 0.90 V

(No Switching)

110

140

μA

LNM version – VEN = 3.3 V, VFB = 0.90 V

(No Switching)

1.4

ISD

Shutdown current

VEN = 0 V

μA

ISKIP

Skip current limit

0.25

IVY_SINK

Reverse current limit

LNM or VOUT overvoltage

0.80

1.0

1.15

VUVLO

Undervoltage lockout threshold

VIN rising

2.85

3.2

VIN falling

2.55

2.9

VEN

Enable threshold

VEN rising

1.1

1.23

1.36

VEN falling

0.95

1.1

1.22

ILKG_EN

Enable input leakage current

VEN = 3.3 V

200

VEN = 36 V

ILKG_FB

Feedback input leakage current

VFB = 1.2 V

0.2

RDS_ON_HS

High-side MOSFET on-resistance

ISW = 0.1 A

0.50

0.60

RDS_ON_LS

Low-side MOSFET on-resistance

ISW = 0.1 A

0.26

0.40

ILIM_HS

High-side MOSFET switch current limit

VIN = 24 V

1.4

1.55

1.65

ILIM_LS

Low-side MOSFET switch current limit

VIN = 24 V

1.35

1.6

1.75

tON_MIN

Minimum switch-on time

on SW pin

110

tOFF_MIN

Minimum switch-off time

on SW pin

110

tSS

Internal soft-start time

from 10% to 90% of VFB

1.4

FSW

Switching frequency

0.8

1.2

MHz

TSD

Thermal shutdown threshold

175

°C

TSD_REC

Thermal recovery threshold

155

°C

VOVP

Overvoltage threshold (VOVP/VFB)

120

VOVP_HYST

Overvoltage hysteresis

DCP3601

Electrical characteristics

DS14782 - Rev 1

page 5/26

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