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N2NF10 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer N2NF10
Bauteilbeschribung  N-channel 100V - 0.23廓 - 2.4A - SOT-223 STripFET??II Power MOSFET
PDF  13 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

N2NF10 Datenblatt(HTML) 5 Page - STMicroelectronics

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STN2NF10
Electrical characteristics
5/13
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=50V, ID = 2.4A
VGS =10V, RG=4.7Ω
(see Figure 14)
6
10
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=50V, ID = 2.4A
VGS =10V, RG=4.7Ω
(see Figure 14)
20
3
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
2.4
17
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD= 2.4A, VGS=0
1.2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 6A, VDD=10V
di/dt=100A/µs,Tj=150°C
(see Figure 19)
70
175
5
ns
nC
A



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