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2SC3421 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer 2SC3421
Bauteilbeschribung  Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications
PDF  4 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3421 Datenblatt(HTML) 3 Page - Toshiba Semiconductor

  2SC3421 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3421 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3421 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3421 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC3421
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Collector-emitter voltage VCE (V)
0
0
Common emitter
Tc = 25°C
1200
600
6
8
12
10
16
4
5
25
10
IB = 1 mA
0
7
4
2
200
400
800
1000
2
14
3
(1) Tc = Ta Infinite heat sink
(2) No heat sink
0
40
60
100
80
20
12
0
4
2
6
(1)
(2)
120
140
160
8
10
25
10
100
Common emitter
VCE = 5 V
10
30
50
500
30
100
1000
Tc = 100°C
−25
300
3
300
−25
Common emitter
VCE = 5 V
1000
400
600
800
Tc = 100°C
25
200
0.2
0.4
0.8
1.0
0.6
0
0
1.2
3
10
30
100
300
10
50
300
500
1000
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature
100
3000
IC max (pulsed)*
IC max (continuous)*
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
30
−25
Common emitter
IC/IB = 10
3
1
0.01
0.05
0.1
30
100
Tc = 100°C
25
1000
300
10
0.03
0.3
0.5



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