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RN1416 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer RN1416
Bauteilbeschribung  Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
PDF  8 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1416 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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RN1414
∼RN1418
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN1414~1418
ICBO
VCB = 50V, IE = 0
―
―
100
nA
Collector cut-off
current
RN1414~1418
ICEO
―
VCE = 50V, IB = 0
―
―
500
nA
RN1414
VEB = 5V, IC = 0
0.35
―
0.65
RN1415
VEB = 6V, IC = 0
0.37
―
0.71
RN1416
VEB = 7V, IC = 0
0.36
―
0.68
RN1417
VEB = 15V, IC = 0
0.78
―
1.46
Emitter cut-off current
RN1418
IEBO
―
VEB = 25V, IC = 0
0.33
―
0.63
mA
RN1414~16,
18
50
―
―
DC current gain
RN1417
hFE
―
VCE = 5V, IC = 10mA
30
―
―
Collector-emitter
saturation voltage
RN1414~1418
VCE (sat)
―
IC = 5mA, IB = 0.25mA
―
0.1
0.3
V
RN1414
0.6
―
2.0
RN1415
0.7
―
2.5
RN1416
0.8
―
2.5
RN1417
1.5
―
3.5
Input voltage (ON)
RN1418
VI (ON)
―
VCE = 0.2V, IC = 5mA
2.5
―
10.0
V
RN1414
0.3
―
0.9
RN1415
0.3
―
1.0
RN1416
0.3
―
1.1
RN1417
0.3
―
2.3
Input voltage (OFF)
RN1418
VI (OFF)
―
VCE = 5V, IC = 0.1mA
0.5
―
5.7
V
Transition frequency
RN1414~1418
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector Output
capacitance
RN1414~1418
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
―
3.0
6.0
pF
RN1414
0.7
1.0
1.3
RN1415
1.54
2.2
2.86
RN1416
3.29
4.7
6.11
RN1417
7.0
10.0
13.0
Input resistor
RN1418
R1
―
―
32.9
47.0
61.1
kΩ
RN1414
―
0.1
―
RN1415
―
0.22
―
RN1416
―
0.47
―
RN1417
―
2.13
―
Resistor ratio
RN1418
R1/R2
―
―
―
4.7
―



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