2N6576 datasheet(1/2 Pages) ISC

Teilenummer	2N6576

Bauteilbeschribung	Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

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Silicon NPN Power Transistor

2N6576

www.iscsemi.com

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DESCRIPTION

Collector-Emitter Breakdown Voltage

-V(BR)CEO= 800V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):5V(Max) @IC= 20A

APPLICATIONS

·

Power switching

·

Hammer drivers

·

Series and shunt regulator

·

Audio amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.46

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current -Continuous

15

A

ICP

Collector Current-Peak

30

A

IB

Base Current

0.25

A

PC

Collector Power Dissipation@TC=25℃

120

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

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