BSP50 datasheet(1/3 Pages) ISC

Teilenummer	BSP50

Bauteilbeschribung	Silicon Darling Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon Darling Transistor

BSP50

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-VCEO= 45V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat)=1.3V(Max) @IC= 0.5A

APPLICATIONS

· Designed for use in automotive ignition, switching and

motor control applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

0.8

A

PC

Total Power Dissipation

@ TC=25℃

1.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

125

℃

/W

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