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M58BW016DB Datenblatt(PDF) 49 Page - STMicroelectronics

Teilenummer M58BW016DB
Bauteilbeschribung  16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
PDF  69 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58BW016DB Datenblatt(HTML) 49 Page - STMicroelectronics

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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
49/69
Figure 15.
Synchronous Burst Read - continuous - valid data ready output
1.
Valid Data Ready = Valid Low during valid clock edge
2.
V= Valid output.
3.
R is an open drain output with an internal pull up resistor of 1 M
Ω. The internal timing of R follows DQ. An external resistor,
typically 300 k
Ω. for a single memory on the R bus, should be used to give the data valid set up time required to recognize
that valid data is available on the next valid clock edge.
Figure 16.
Synchronous Burst Read - Burst Address Advance
AI03649
K
Output (1)
VV
V
V
tRLKH
R
V
(2)
AI03650
K
ADD
Q0
Q1
L
Q2
ADD
VALID
G
tGLQV
tBLKH
tBHKH
B



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