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LP5306 Datenblatt(PDF) 5 Page - Lowpower Semiconductor inc

Teilenummer LP5306
Bauteilbeschribung  Over Voltage and Over Current Protection IC
PDF  8 Pages
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Hersteller  POWER [Lowpower Semiconductor inc]
Direct Link  http://www.lowpowersemi.com
Logo POWER - Lowpower Semiconductor inc

LP5306 Datenblatt(HTML) 5 Page - Lowpower Semiconductor inc

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Preliminary Datasheet
LP5306
Email: marketing@lowpowersemi.com www.lowpowersemi.com
Page 5 of 8
LP5306 Version 0.2 JUN.-2018
Electrical Characteristics
(VIN = 5V, TA = 25°C, Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
General Function
Power Source Voltage
VIN
TJ= +25 °C
3.3
5
26
V
Input UVLO Threshold
VUVLO
VIN Rising
2.5
2.7
2.9
V
UVLO Threshold Hysteresis
Δ
VUVLO
Falling Hysteresis
200
mV
Power On Deglitch Time
TDeglitch
8
ms
Soft Start Time
TSS
8.2
ms
Power Source Current
IIN
VIN=5V, EN=L
400
µA
Shutdown Current
ISD
VIN=5V, EN=H
55
uA
Thermal Shutdown Threshold
TSD
140
°C
Thermal Shutdown Threshold
Hysteresis
ΔTSD
20
°C
Logic Function
EN Threshold Voltage
VENH
1.4
V
VENL
0.4
V
EN Input Resistance to GND
IEN
EN=2V
15
uA
FAULT Output Logic Low
Sink 5mA
0.2
V
FAULT Logic High Leakage Current
Fault=5V
10
uA
Power MOS
Switch On Resistance
RDS(ON)
IOUT=1A
160
250
m
Ω
Protection Functions
Input Over Voltage Protect threshold
VIOVP
VIN from 5V to 10V
6.8
V
Input OVP threshold Hysteresis
Δ
VIOVP
VIN from 10V to 5V
50
mV
Input OVP Recovery Delay Time
TOVPR
8.2
ms
Over Current Protection
IOCP
RSET = 24.9K,
3.3V<VIN<VIOVP
1
A
OCP Blanking Time
TOCP
200
us
Over Current Recover Delay
TOCR
65
ms
Battery Voltage OVP
VBOVP
VIN=5V
4.35
V
Battery OVP Hysteresis
Δ
VBOVP
VIN=5V
0.275
V
Battery OVP Blanking Time
TBOVP
VIN=5V
200
us
BAT Pin Leakage Current
IBAT
VIN=5V, VBAT=4.4V
10
nA



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