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DF2S5.6FS Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer DF2S5.6FS
Bauteilbeschribung  Product for Use Only as Protection against Electrostatic Discharge (ESD)
PDF  3 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2S5.6FS Datenblatt(HTML) 2 Page - Toshiba Semiconductor

  DF2S5.6FS Datasheet HTML 1Page - Toshiba Semiconductor DF2S5.6FS Datasheet HTML 2Page - Toshiba Semiconductor DF2S5.6FS Datasheet HTML 3Page - Toshiba Semiconductor  
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DF2S5.6FS
2007-11-01
2
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit (Top View)
. 6
Criterion: No damage to device elements
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±30kV
CT - VR
1
10
100
012
3456
f=1MHz
Ta=25°C
REVERSE VOLTAGE VR(V)
IZ - VZ
0
0
1
10
100
012
3
4567
89
10
0.01
Ta=25°C
0.1
ZENER VOLTAGE VZ (V)



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