Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

TC74HC595AF Datenblatt(PDF) 4 Page - Toshiba Semiconductor

Teilenummer TC74HC595AF
Bauteilbeschribung  CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register/Latch (3-state)
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74HC595AF Datenblatt(HTML) 4 Page - Toshiba Semiconductor

  TC74HC595AF Datasheet HTML 1Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 2Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 3Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 4Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 5Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 6Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 7Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 8Page - Toshiba Semiconductor TC74HC595AF Datasheet HTML 9Page - Toshiba Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 11 page
background image
TC74HC595AP/AF/AFN
2007-10-01
4
System Diagram
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
0.5 to 7
V
DC input voltage
VIN
0.5 to VCC + 0.5
V
DC output voltage
VOUT
0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current (QH’)
(QA to QH)
IOUT
±25
±35
mA
DC VCC/ground current
ICC
±75
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.



Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com