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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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PP200T120 Datenblatt(PDF) 2 Page - Powerex Power Semiconductors |
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PP200T120 Datenblatt(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 6 page  TENTATIVE PP200T120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 POW-R-PAK TM 200A / 1200V 3 phase IGBT Assembly PP200T120(-) - 2 - Absolute Maximum Ratings, Tj = 25°C unless otherwise specified General Symbol Units IGBT Junction Temperature Tj -40 to +150 °C Storage Temperature Tstg -40 to +125 °C Operating Temperature Top -25 to +85 °C Voltage Applied to DC terminals VCC 800 Volts Isolation Voltage, AC 1 minute, 60Hz sinusoidal Viso 2500 Volts IGBT Inverter Collector Current (TC = 25°C) IC 200 Amperes Peak Collector Current (Tj < 150°C) ICM 400 Amperes Emitter Current IE 200 Amperes Peak Emitter Current IEM 400 Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 890 Watts Gate Drive Board Unregulated +24V Power Supply 30 Volts Regulated +15V Power Supply 18 Volts PWM Signal Input Voltage 20 Volts Fault Output Supply Voltage 30 Volts Fault Output Current 50 mA IGBT Inverter Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min Typ Max Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V - - 1 mA IC = 200A, Tj = 25°C - 1.8 2.4 Volts Collector – Emitter Saturation Voltage VCE(sat) IC = 200A, Tj = 125°C - 1.9 - Volts Emitter – Collector Voltage VEC IE = 200A - - 3.2 Volts td(on) - - 300 ns tr - - 80 ns td(off) - - 500 ns Inductive Load Switching Times tf - - 300 ns Diode Reverse Recovery Time trr - - 200 ns Diode Reverse Recovery Charge Qrr VCC = 600V IC = 200A VGE = 15V RG = 1.6 Ω - 12.2 - µC DC Link Capacitance 4950 µF |
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