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C5TH3012 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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C5TH3012 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Ultrafast Recovery Rectifier Diode C5TH3012 www.iscsemi.com 1 FEATURES · Polyimide passivation · Optimized for high speed operation · 175℃ maximum operating junction temperature APPLICATIONS · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC) · Soft switched/resonant converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1200 V IF(AV) Average Rectified Forward Current 15*2 A IFSM Non-repetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 125 A TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.7 ℃ /W 3 2 1 TO-220C Package 1 3 2 Pin 1 Anode 2 Cathode 3 Anode |
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