Comchip Technology CO., LTD.

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REV:A

Electrical Characteristics (at TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Typ

Unit

Silicon Power Transistor

QW-JTR190

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector cutoff current

Emitter cutoff current

DC current gain

DC current gain

VBR(CEO)

VCE(sat)

VBE(sat)

ICBO

IEBO

hFE(1)

hFE(2)

IC = -10mA, IB = 0

IC = -300mA, IB = -60mA

IC = -300mA, IB = -60mA

VCB = -480V, IE = 0

VBE = -7V, IC = 0

IC = -100mA, VCE = -5V

IC = -500mA, VCE = -5V

-450

V

V

V

µA

µA

-0.7

-1.2

-10

-1.0

80

5

300

Rating and Characteristic Curves (2SA2184-HF)

Fig.1 - hFE ― IC

Collector Current, IC (A)

-0.001

-0.1

1000

1

10

0.1

Fig.2 - VCE(sat) ― IC

100

-0.01

-1

-10

-0.001

-0.1

-0.01

-1

-10

-10

-0.1

-100

-0.01

Collector Current, IC (A)

VCE= 5V

TC= 25°C

TC= 25°C

ꞵ= 5V

-1