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GD05MPS17J Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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GD05MPS17J Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCD7049 eq GD05MPS17J Silicon Carbide Schottky Diode www.iscsemi.com 1 FEATURES · Low Thermal Resistance · Low Reverse Leakage Current · Positive Temperature Coefficient of VF APPLICATIONS · EV Fast Chargers · Motor Drives · Switched Mode Power Supply (SMPS) ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitisve Peak Reverse Voltage 1700 V IF Continuous Forward Current Tc=100°C,D=1 15 A Tc=135°C,D=1 11 Tc=164°C,D=1 5 IFSM Non-Repetitive Forward Surge Current Tc=25°C,Tp=10ms,Half Sine Pulse 50 A Tc=150°C,Tp=10ms,Half Sine Pulse 40 IFRM Repetitive Peak Forward Surge Current Tc=25°C,Tp=10ms,Half Sine Pulse 30 A Tc=110°C,Tp=10ms,Half Sine Pulse 21 Ptot Power Dissipation Tc=25°C 149 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER TYP. UNIT Rth j-c Thermal Resistance,Junction to Case 1.01 ℃ /W |
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