ISG2192

eq IRG4PSC71UD

IGBT

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TJ = 25 °C unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

VCES

Collector-Emitter Breakdown Voltage

VGE=0, IC= 0.25mA

600

--

--

V

VGE(th)

Gate-Emitter Threshold Voltage

VGE= VCE, IC= 0.25mA

3.0

--

6.0

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 60A, VCE= 15V,

TJ=25℃

--

--

2.0

V

IC= 100A, VCE= 15V,

TJ=25℃

--

1.95

--

V

IC= 60A, VCE= 15V,

TJ=150℃

--

1.7

--

V

ICES

Zero Gate Voltage Collector Current

VCE= 600V, VGE=0V

--

--

500

uA

IGES

Gate-Emitter Leakage Current

VGE=±20V, VCE=0V

--

--

±

200

nA

VSD

Forward On-Voltage

IS= 60A; VGS= 0V

--

--

1.7

V

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products.

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