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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IXFT50N60P3 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFT50N60P3 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1315 eq IXFT50N60P3 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 160mΩ(Max)@VGS= 10V APPLICATIONS · High Power Density · Easy to Mount · Space Savings ABSOLUTE MAXIMUM RATINGS (TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pulse 125 A PD Total Dissipation @TC=25℃ 1040 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.12 ℃ /W |
Ähnliche Teilenummer - IXFT50N60P3 |
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Ähnliche Beschreibung - IXFT50N60P3 |
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