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TC74VCXH16646FT Datenblatt(PDF) 9 Page - Toshiba Semiconductor |
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TC74VCXH16646FT Datenblatt(HTML) 9 Page - Toshiba Semiconductor |
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9 / 15 page ![]() TC74VCXH16646FT 2007-10-19 9 DC Characteristics (Ta = −40 to 85°C, 1.8 V <= VCC < 2.3 V) Characteristics Symbol Test Condition VCC (V) Min Max Unit H-level VIH ⎯ 1.8 to 2.3 0.7 × VCC ⎯ Input voltage L-level VIL ⎯ 1.8 to 2.3 ⎯ 0.2 × VCC V IOH = −100 μA 1.8 VCC − 0.2 ⎯ H-level VOH VIN = VIH or VIL IOH = −6 mA 1.8 1.4 ⎯ IOL = 100 μA 1.8 ⎯ 0.2 Output voltage L-level VOL VIN = VIH or VIL IOL = 6 mA 1.8 ⎯ 0.3 V Input leakage current (DIR, OE , CAB, CBA, SAB, SBA) IIN VIN = 0 to 3.6 V 1.8 ⎯ ±5.0 μA VIN = 0.36 V 1.8 25 ⎯ Bushold input minimum drive hold current II (HOLD) VIN = 1.26 V 1.8 −25 ⎯ μA (Note 1) 1.8 ⎯ 200 Bushold input over-drive current to change state II (OD) (Note 2) 1.8 ⎯ −200 μA 3-state output OFF state current IOZ VIN = VIH or VIL VOUT = VCC or GND 1.8 ⎯ ±10.0 μA Quiescent supply current ICC VIN = VCC or GND 1.8 ⎯ 20.0 μA Note 1: An external driver must source at least the specified current to switch from LOW-to-HIGH. Note 2: An external driver must sink at least the specified current to switch from HIGH-to-LOW. |
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