IRGPF30F datasheet(26/35 Pages) IRF

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TEMPERATURE & HUMIDITY (THB)

Test circuit

Conditions

Bias:

Vce = 100% of maximum rated

V(BR)CES up to 500V: 500V for

all devices with rated V(BR)CES

DUT

greater than 500V *

Temperature:

85°C

BIAS

Relative Humidity:

85%

Duration:

2000 Hours nominal

Test points:

168, 500, 1000,

1500, 2000 Hours nominal.

* Devices manufactured since week

code 9640 the applied bias: V(BR)CES =

Vmax or 100v which ever the lesser

D = Diode for CoPack devices only

Purpose

Failure Modes

Sensitive Parameters

V(BR)CES,VCE(on)

Temperature and Humidity bias testing for non-hermetic packages is to subject the

devices to extremes of temperature and humidity to examine the ability of the

package to withstand the deleterious effect of the humid environment.

There are two primary failure modes which have been observed. The first failure

mode comes about as a result of the ingression of water molecules into the active

area on the surface of the die. Once sufficient water has accumulated in the region

of the electric field termination structure on the die, the perturbation of that field

begins to degrade the breakdown characteristics of the device.

The second failure mode that has been observed is due to cathodic corrosion of the

aluminum emitter bonding pad. As with first failure mode, water will ingress to the top

of the die. There, in the presence of applied bias, an electric current through the few

monolayers of water will begin to cause the bond pad to dissolve. Eventually. the

corrosion will proceed to the point where the current capability of the device is

increased and become unstable.

The dominance of either of these failure modes is basically determined by the

amount of bias present during test.

Under low bias conditions, the corrosion

proceeds slowly, so the first failure mode will proceed very rapidly and the device will

fail due to on-resistance before the breakdown characteristics can degrade.

IRGPF30F Datenblatt(PDF) 26 Page - International Rectifier

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