1N5817 datasheet(4/5 Pages) STMICROELECTRONICS

Teilenummer	1N5817

Bauteilbeschribung	LOW DROP POWER SCHOTTKY RECTIFIER

PDF	5 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 5 page

1N581x

4/5

1E-3

1E-2

1E-1

1E+0

1E+1

IR(mA)

1N5817

1N5818

VR(V)

Tj=100°C

Tj=25°C

Tj=125°C

Fig. 8-1: Reverse leakage current versus reverse

voltage applied (typical values) (1N5817/1N5818).

1E-3

1E-2

1E-1

1E+0

1E+1

IR(mA)

VR(V)

Tj=100°C

Tj=25°C

Tj=125°C

Fig. 8-2: Reverse leakage current versus reverse

voltage applied (typical values) (1N5819).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.01

0.10

1.00

10.00

IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 9-1: Forward voltage drop versus forward

current (typical values) (1N5817/1N5818).

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

0.01

0.10

1.00

10.00

IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 9-2: Forward voltage drop versus forward

current (typical values) (1N5819).

100

1000

IFSM(A)

Number of cycles

F=50Hz

Tj initial=25°C

Fig. 10: Non repetitive surge peak forward current

versus number of cycles.

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