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F6921 Datenblatt(PDF) 5 Page - Renesas Technology Corp

Teilenummer F6921
Bauteilbeschribung  Dual-Channel Low Noise Amplifier 10.7 – 12.75 GHz
PDF  17 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

F6921 Datenblatt(HTML) 5 Page - Renesas Technology Corp

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F6921 Datasheet
R35DS0092EU0102 Rev.1.02
Nov 14, 2024
Page 5
2. Specifications
Caution: Exposure of the device to parameter values outside of the range listed below may reduce the operating
lifetime and adversely and permanently alter the device characteristics. Furthermore, functional operation at or
near absolute maximum ratings is not implied.
2.1 Absolute Maximum Ratings
Parameter
Symbol
Conditions
Minimum
Maximum
Unit
Supply Voltage
VDD
-
-0.3
1.2
V
Reference Current
IREF
-
0
250
μA
Input RF Pin DC Voltage
VDC_RFI
-
-0.3
1.0
V
Output RF Pin DC Voltage
VDC_RFO
-
-0.3
1.2
V
RF Input Power
PIN
VDD = 1.0V, VSWR<2:1
-
0
dBm
Junction Temperature
TJ
-
-
125
°C
ESD – Human Body Model
VHBM
JS-001-2012
-
750
V
ESD – Charged Device Model
VCDM
JESD22-C101
-
250
V
2.2 Thermal Information
Parameter
Symbol
Value
Unit
Theta JB. Junction to board.
θJB
14
°C/W
Theta JC. Junction to case. (case top)
θJC
108
°C/W
Theta JA. Junction to ambient.
θJA
47
°C/W
Storage Temperature
TSTOR
-40 to +150
°
C
Lead Temperature (soldering, 30s)
TLEAD
260
°
C



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