© 2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

LM78XX / LM78XXA Rev. 1.3.1

6

Electrical Characteristics (LM7809)

Refer to the test circuit, -40°C < TJ < 125°C, IO = 500 mA, VI = 15 V, CI = 0.33 μF, CO = 0.1 μF, unless otherwise spec-

ified.

Notes:

8. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.

9. These parameters, although guaranteed, are not 100% tested in production.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VO

Output Voltage

TJ = +25°C

8.659.009.35

V

IO = 5 mA to 1 A, PO ≤ 15 W,

VI = 11.5 V to 24 V

8.60

9.00

9.40

Regline

Line Regulation(8)

TJ = +25°C

VI = 11.5 V to 25 V

6

180

mV

VI = 12 V to 17 V

2

90

Regload

Load Regulation(8)

TJ = +25°C

IO = 5 mA to 1.5 A

12

180

mV

IO = 250 mA to 750 mA

4

90

IQ

Quiescent Current

TJ = +25°C5

8

mA

ΔIQ

Quiescent Current

Change

IO = 5 mA to 1 A

0.5

mA

VI = 11.5 V to 26 V

1.3

ΔVO/ΔT

Output Voltage Drift(9)

IO = 5 mA

-1

mV/

°C

VN

Output Noise Voltage

f = 10 Hz to 100 kHz, TA = +25°C58

μV

RR

Ripple Rejection(9)

f = 120 Hz, VI = 13 V to 23 V

56

71

dB

VDROP

Dropout Voltage

IO = 1 A, TJ = +25°C2

V

RO

Output Resistance(9)

f = 1 kHz

17

m

Ω

ISC

Short-Circuit Current

VI = 35 V, TJ = +25°C250

mA

IPK

Peak Current(9)

TJ = +25°C2.2

A