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3DD159 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 3DD159
Bauteilbeschribung  Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DD159 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
3DD159
www.iscsemi.com
1
DESCRIPTION
·
With TO-3 packaging
·
Large collector current
·
Low collector saturation voltage
·
High power dissipation
APPLICATIONS
·
Designed for use in DC-DC converter
·
Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
A
B
C
D
E
UNIT
VCBO
Collector-Base Voltage
80
150
200
250
350
400
V
VCEO
Collector-Emitter Voltage
50
100
150
200
250
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
PD
Total Power Dissipation@TC=75℃
50
W
TJ
Max.Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.0
℃
/W
SYMBOL
PARAMETER
CONDITIONS
MIN
UNIT
A
B
C
D
E
F
VCBO
Collector-Base Voltage
IC= 3mA; IE= 0A
80
150
200
250
350
400
V
VCEO
Collector-Emitter Voltage
IC= 3mA; IE= 0A
50
100
150
200
250
300
V
VEBO
Emitter-Base Voltage
IE= 1mA; IC= 0A
5
V


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