| Datenblatt-Suchmaschine für elektronische Bauteile |
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STP25N06 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STP25N06 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor STP25N06 www.iscsemi.com 1 FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 65mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Pulse 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance, Junction to Case 1.57 ℃ /W 3 2 1 TO-220C Package |
Ähnliche Teilenummer - STP25N06 |
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Ähnliche Beschreibung - STP25N06 |
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