1995 Sep 04

3

NXP Semiconductors

Product specification

NPN 1 GHz wideband transistor

BFS17W

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 C (unless otherwise specified).

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts =118 C; note 1

190

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE =0; VCB =10V



10

nA

hFE

DC current gain

IC =2mA; VCE =1V

25

90



fT

transition frequency

IC =25mA; VCE =5V;

f= 500MHz



1.6



GHz

Cc

collector capacitance

IE =ie =0; VCB =10V;

f= 1MHz



0.8

1.5

pF

Ce

emitter capacitance

IC =ic =0; VEB =0.5 V;

f= 1MHz



2



pF

Cre

feedback capacitance

IB =ib =0; VCE =5V;

f= 1MHz; Tamb =25 C



0.75



pF

F

noise figure

IC =2mA; VCE =5V;

f= 500MHz;



S = opt



4.5



dB

Fig.2 Power derating curve.

handbook, halfpage

0

50

100

200

200

0

MLB587

150

T

( C)

o

s

Ptot

(mW)

300

400

100

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =1 V.

handbook, halfpage

60

20

40

MBG237

0

110

hFE

IC (mA)

10−1

102