STTH1R02RL datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STTH1R02

4/10

Figure 5.

Relative variation of thermal

impedance junction to case versus

pulse duration (SMB)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration (DO-41)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

SMB

cu=1cm²

tP(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

DO-41

Lleads=10mm

tP(s)

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (DO-15)

Figure 8.

Junction capacitance versus

reverse applied voltage (typical

values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

DO-15

Leads =10mm

tP(s)

100

1000

C(pF)

F=1MHz

osc=30mVRMS

j=25°C

VR(V)

Figure 9.

Reverse recovery charges

versus dIF/dt (typical values)

Figure 10.

Reverse recovery time versus dIF/dt

(typical values)

100

1000

RR(nC)

F=1.5A

R=160V

j=125°C

j=25°C

dIF/dt(A/µs)

100

1000

RR(ns)

F=1.5A

R=160V

j=125°C

j=25°C

dIF/dt(A/µs)

STTH1R02RL Datenblatt(PDF) 4 Page - STMicroelectronics

STTH1R02RL Datenblatt(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Datenblatt Download

Link URL