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STM32L412C8I6TR Datenblatt(PDF) 94 Page - STMicroelectronics |
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STM32L412C8I6TR Datenblatt(HTML) 94 Page - STMicroelectronics |
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94 / 192 page ![]() Electrical characteristics STM32L412xx 94/192 DS12469 Rev 4 Table 38. Typical current consumption in Run, with different codes running from SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V) Symbol Parameter Conditions(1) TYP Unit TYP Unit - Voltage scaling Code 25 °C 25 °C IDD_ALL (Run) Supply current in Run mode fHCLK = fHSE up to 48 MHz included, bypass mode PLL ON above 48 MHz all peripherals disable Reduced code(2) 0.86 mA 33 µA/MHz Coremark 0.86 33 Dhrystone 2.1 0.88 34 Fibonacci 0.86 33 While(1) 0.80 31 Reduced code(2) 3.08 39 Coremark 3.02 38 Dhrystone 2.1 3.08 39 Fibonacci 3.06 38 While(1) 2.85 36 1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V 2. Reduced code used for characterization results provided in Table 25, Table 27, Table 29. Table 39. Typical current consumption in Run, with different codes running from SRAM1 and power supplied by external SMPS (VDD12 = 1.00 V) Symbol Parameter Conditions(1) TYP Unit TYP Unit - Voltage scaling Code 25 °C 25 °C IDD_ALL (Run) Supply current in Run mode fHCLK = fHSE up to 48 MHz included, bypass mode PLL ON above 48 MHz all peripherals disable Reduced code(2) 0.71 mA 27 µA/MHz Coremark 0.71 27 Dhrystone 2.1 0.73 28 Fibonacci 0.71 27 While(1) 0.66 25 1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.00 V 2. Reduced code used for characterization results provided in Table 25, Table 27, Table 29. |
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