T2035H datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

T2035H Series

4/10

Figure 3.

RMS on-state current vs ambient

temperature (epoxy printed

circuit board FR4 ecu = 35 µm)

Figure 4.

Relative variation of thermal

impedance vs pulse duration

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

100

125

150

IT(RMS)(A)

α=180°

CU=1cm²

Tamb(°C)

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

K=[Z

th/Rth]

th(j-a)

th(j-c)

tP(s)

Figure 5.

On-state characteristics

(maximum values)

Figure 6.

Surge peak on-state current vs

number of cycles

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ITM(A)

j=25°C

j=150°C

j max. :

T0 = 0.80 V

D = 21 mW

VTM(V)

100

120

140

160

180

200

220

100

1000

TSM(A)

Non repetitive

j initial=25°C

Repetitive

c=127°C

One cycle

t=20ms

Number of cycles

Figure 7.

Non repetitive surge peak on-state

current (sinusoidal pulse width

tp<10 ms) and value of I²t

Figure 8.

Relative variation of gate trigger

current, holding current and

latching current vs junction

temperature (typical values)

100

1000

10000

0.01

0.10

1.00

10.00

TSM(A), I²t (A²s)

Tj initial=25°C

dI/dt limitation: 50A/µs

TSM

I²t

tP(ms)

0.0

0.5

1.0

1.5

2.0

2.5

-40

-20

100

120

140

160

GT,IH,IL [Tj]/IGT,IH,IL [Tj=25°C]

H & IL

Tj(°C)

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