BAT54W datasheet(3/5 Pages) STMICROELECTRONICS

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300

350

400

450

500

550

600

S(Cu) (mm )

Rth(j-a) (

°C/W)

P=0.2W

Fig. 6: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy

printedcircuit board FR4, copper thickness: 35

µm.)

1E-2

1E-1

1E+0

1E+1

1E+2

VR(V)

IR(

µA)

Tj=50

°C

Tj=25

°C

Tj=100

°C

Fig. 2: Reverse leakage current versus reverse

voltage applied (typical values).

100

125

150

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

Tj(

°C)

IR(

µA)

VR=30V

Fig. 3: Reverse leakage current versus junction

temperature.

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

0.01

0.10

1.00

tp(s)

Zth(j-a)/Rth(j-a)

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

δ=tp/T

Fig. 5: Relative variation of thermal impedance

junction to ambient versus pulse duration (epoxy

FR4 with recommended pad layout, e(Cu)=35

µm)

BAT54J / W / AW / CW / SW

3/5

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