| Datenblatt-Suchmaschine für elektronische Bauteile |
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BC847 Datenblatt(PDF) 1 Page - STMicroelectronics |
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BC847 Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BC847 SMALL SIGNAL NPN TRANSISTORS s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s LOW LEVEL GENERAL PURPOSE s PNP COMPLEMENT IS BC857 INTERNAL SCHEMATIC DIAGRAM October 1997 1 2 3 SOT-23 Type Marking BC847B 1F ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCES Collector-Emit ter Voltage (VBE =0) 50 V VCBO Collector-Base Voltage (IE =0) 50 V VCEO Collector-Emit ter Voltage (IB =0) 45 V VEBO Emitter-Base Voltage (IC =0) 6 V IC Collector Current 0.1 A ICM Collector Peak Current 0.2 A IBM Base Peak Current 0.2 A IEM Emitter Peak Current 0.2 A Ptot Tot al Dissipation at Tc =25 oC 300 mW Tstg Storage Temperature -65 to 150 oC Tj Max. O perat ing Junction Temperature 150 oC 1/4 |
Ähnliche Teilenummer - BC847 |
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Ähnliche Beschreibung - BC847 |
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