| Datenblatt-Suchmaschine für elektronische Bauteile |
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BCY59 Datenblatt(PDF) 1 Page - STMicroelectronics |
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BCY59 Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() BCY58 BCY59 January 1989 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter BCY58 BCY59 Unit VCES Collector-emitter Voltage (V BE =0) 32 45 V VCEO Collector-emitter Voltage (IB =0) 32 45 V VEBO Emitter-base Voltage (I C =0) 7 V I C Collector Current 200 mA I B Base Current 50 mA Pto t Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 45 °C 0.39 1 mW W T stg,Tj Storage and Junction Temperature – 65 to 200 °C The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The com- plementary PNP types are respectively the BCY78 and BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM 1/6 |
Ähnliche Teilenummer - BCY59 |
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Ähnliche Beschreibung - BCY59 |
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