4

TLV6003

SLOS981 – OCTOBER 2019

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Copyright © 2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential voltages, are with respect to GND

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VCC

Supply voltage(2)

–18

17

V

VIN+, VIN–

Input voltage

Singe-ended and common-mode input

voltage, VICR

–0.3

VCC + 5

V

Differential, VID

±20

Input current (any input)

±10

mA

IO

Output current

±10

mA

Continuous total power dissipation

See Dissipation Rating

TJ

Maximum junction temperature

–55

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±450

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply Voltage

Single Supply

2.5

16

V

Split Supply

±1.25

±8

TA

Operating free-air temperature

–55

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information – TLV6003

THERMAL METRIC(1)

TLV6003

UNIT

DBV

5 PINS

RθJA

Junction-to-ambient thermal resistance

166.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

89.9

°C/W

RθJB

Junction-to-board thermal resistance

36.5

°C/W

ψJT

Junction-to-top characterization parameter

14.0

°C/W

ψJB

Junction-to-board characterization parameter

36.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W