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LD7538GL Datenblatt(PDF) 13 Page - Leadtrend Technology |
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LD7538GL Datenblatt(HTML) 13 Page - Leadtrend Technology |
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13 / 17 page ![]() LD7538 13 Leadtrend Technology Corporation LD7538-DS-00 November 2012 saturation; it would cause damage for acting beyond the maximum safety operating area. It ’s necessary to check the characteristic of MOSFET. Fig. 23 shows a totem pole architecture for the circuit of OUT. The output high level of OUT is at around VCC-1.5V. Refer to on-region characteristics of the MOSFET, check the saturation current of VGSH(MIN) to make sure the saturation current is high enough to activate MOSFET to operate in ohmic region. In order not to decrease the voltage across VG, it’s recommended not to connect a forward diode between the gate of the MOSFET and OUT pin, for example like Fig 24. In addition, pulling VCC level high can keep VGSH in high level, for example: 1. Increase NX value to pull VCC level high. 2. Increase VCC capacitance to improve VCC’s performance to drop at startup transient, shown as Fig 25. VDS ID Ohmic Region Saturation Region VGS1 VGS2 VGS3 VGS4 VGS5 VGS5 > VGS4 > VGS3 > VGS2 > VGS1 Cut-off region Fig. 22 CS GND OUT VGS VS VCC VG VD VDS RS NX CVCC Fig. 23 CS GND OUT VCC VG RS NX CVCC Fig. 24 VCC t Large Capacitance of VCC Cap Small Capacitance of VCC Cap UVLO(on) Fig. 25 |
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