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TFS7701-7708 Datenblatt(PDF) 13 Page - Power Integrations, Inc. |
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TFS7701-7708 Datenblatt(HTML) 13 Page - Power Integrations, Inc. |
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13 / 42 page ![]() Rev. B 04/15 13 TFS7701-7708 www.power.com shunt regulator, which will be enabled if the BYPASS pin voltage is externally driven above 5.7 V. The BYPASS pin shunt current is used for two functions: 1. First, a 4 mA threshold (I BP(ON)) for main remote-on. When the BYPASS pin current exceeds this threshold, the main is enabled. 2. Second a 15 mA threshold (I BP(SD))for standby secondary OVP latch-off. When the BYPASS pin current exceeds this threshold, the standby and main converters are latched-off. This latch can be reset by pulling the LINE-SENSE pin below the line undervoltage threshold (I L(SB-UVOFF)), or by discharging the BYPASS pin below 4.7 V. Main and Standby Line Overvoltage Detection (OV) The overvoltage threshold is included in the device, and can be used to disable the device during overvoltage (with the use of an additional external signal Zener). The overvoltage threshold is set sufficiently high to prevent accidental triggering during boost PFC overshoot conditions. When the overvoltage condition is triggered, it will simultaneously shutdown both the main and standby. The overvoltage feature is intended for use with external components (circuitry), to program the overvoltage threshold independently of the undervoltage thresholds (see the Applications section for details). High-Power eSIP Package The HiperTFS-2 package is designed to minimize the physical size of the device, while maintaining a low thermal resistance and sufficient electrical spacing for the pins. The package has 12 functional pins with 4 pins removed for increased pin-to-pin spacing between high-voltage pins. The low-side two-switch forward and flyback MOSFETs have a thermal resistance of less than 1 °C/W to the exposed pad on the back of the package. Since this pad is referenced to the SOURCE pin (Source), it is at electrical ground potential and thus can be connected to the heat sink without need for electrical insulation. The high-side MOSFET is over-molded to achieve electrical isolation and thus also allows direct connection to the heat sink. |
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