BUL49D datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.56

62. 5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =850 V

Tj =125

100

500

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =9 V

100

µA

BVEBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =10mA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =10 mA

L =25 mH

450

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =1 A

IB =0.2 A

IC =2 A

IB =0.4 A

IC =4 A

IB =0.8 A

0.1

0.3

0.6

1.2

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =1 A

IB =0.2 A

IC =4 A

IB =0.8 A

1.0

1.3

hFE

∗

DC Current G ain

IC =10 mA

VCE =5 V

IC =0. 5 A

VCE =5 V

IC =7 A

VCE =10 V

VCEW

Maximum Collect or

Emitt er Volt age

Without Snubber

IC =8 A

RBB =0

Ω

VBB =-2.5 V

L = 50

µH

tp =10

µs

450

RESI STIVE LO AD

St orage Time

Fall T ime

IC =2 A

VCC = 250 V

IB(o n) =IB(off) =0. 4 A

0.8

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =4 A

IB(on ) =0.8 A

VBE(off) =-5 V

RBB =0

Ω

VCL = 300 V

L = 1 mH

0.6

1.3

100

µs

Diode Forward Volt age

IC =3 A

1.5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUL49D

2/6

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