BUV98V datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthc-h

Thermal Resistance Ju nction- case

Max

Thermal Resistance Case-heatsin k With Conductive

Grease Applied

Max

0.83

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collecto r Cu t-of f

Current (RBE =5

Ω)

VCE =VCEV

Tj = 100

ICEV

Collecto r Cu t-of f

Current (VBE =-5V)

VCE =VCEV

Tj = 100

0. 4

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

VCEO(SUS) * Collecto r-Emitter

Sustaining Voltage

IC =0.2 A

L = 25 mH

Vclamp = 450 V

450

hFE

∗

DC Current Gain

IC =24 A

VCE =5 V

VCE(sat)

∗ Collector-Emitter

Satu ration Vo ltage

IC =20 A

IB =4 A

IC =30 A

IB =8 A

1. 5

3. 5

VBE(sat)

∗ Base-Emitter

Satu ration Vo ltage

IC =20 A

IB =4 A

1. 6

diC/dt

Rateof Riseof

On-state Collector

VCC =3 00 V

RC =0

tp =3

µs

IB1 =6 A

Tj = 100

100

µs

VCE(3

µs)•• Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC =1 5

Ω

IB1 =6 A

Tj =1 00

VCE(5

µs)•• Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC =1 5

Ω

IB1 =6 A

Tj =1 00

Storage Time

Fall Time

IC =20 A

VCC =50 V

VBB =-5 V

LB =1.5

µH

Vclamp = 300 V IB1 =4 A

L = 750

µHTj = 100 oC

0. 4

µs

VCEW

Maximu m Collector

Emitter Voltage

With ou t Snubber

ICWoff =30 A

IB1 =6 A

VBB =-5 V

VCC =50 V

L = 750

µHLB =15 µH

Tj =1 25

350

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUV98V

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