BUX98 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.7

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 10

Ω)

VCE = VCES

TCASE = 125

µA

ICES

Collector Cut-off

Current (VBE = 0 )

VCE = VCES

TCASE = 125

400

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = VCEO

2mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

for BUX98

for BUX98A

400

450

VCER(sus)

∗ Collector-Emitter

Sustaining Voltage

L = 2mH

IC = 1 A

for BUX98

for BUX98A

850

1000

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

for BUX98

IC = 20 A

IB = 4 A

for BUX98A

IC = 16 A

IB = 3.2 A

IC = 24 A

IB = 5 A

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

for BUX98

IC = 20 A

IB = 4 A

for BUX98A

IC = 16 A

IB = 3.2 A

1.6

ton

Turn-on Time

for BUX98

µs

Storage Time

VCC = 150 V

IC = 20 A

µs

Fall Time

IB1 = - IB2 = 4 A

0.8

µs

ton

Turn-on Time

for BUX98A

µs

Storage Time

VCC = 150 V

IC = 16 A

µs

Fall Time

IB1 = - IB2 = 3.2 A

0.8

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %

BUX98 / BUX98A

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