Copyright 2024 RAMXEED LIMITED

Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited.

RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's

part number unchanged.

Memory FeRAM

256 K (32 K  8) Bit

MB85R256F

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DESCRIPTIONS

The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

The MB85R256F uses a pseudo - SRAM interface.



FEATURES

• Bit configuration

: 32,768 words  8 bits

• Read/write endurance

: 1012 times / byte

• Data retention

: 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C)

• Operating power supply voltage : 2.7 V to 3.6 V

• Low power consumption

: Operating power supply current 5 mA (Typ)

Standby current 5 A (Typ)

• Operation ambient temperature range:  40 C to  85 C

• Package

: 28-pin plastic TSOP

RoHS compliant

DS501-00011-9v1-E